Influence of Green Polyhydroxylic Compounds on Copper Nano Thin Film Deposition

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Copper–titanium thin film interaction

Interaction between 5 lm thick copper and 50 nm thin titanium films was investigated as a function of annealing temperature and time using MeV He Rutherford backscattering, X-ray diffraction and dynamic Secondary Ion Mass Spectrometry. Samples were made by depositing 10 nm of titanium on a PECVD silicon oxynitride, followed by 50 nm of titanium nitride and 50 nm of titanium in the said order. I...

متن کامل

Process Optimization of Deposition Conditions for Low Temperature Thin Film Insulators used in Thin Film Transistors Displays

Deposition process for thin insulator used in polysilicon gate dielectric of thin film transistors are optimized. Silane and N2O plasma are used to form SiO2 layers at temperatures below 150 ºC. The deposition conditions as well as system operating parameters such as pressure, temperature, gas flow ratios, total flow rate and plasma power are also studied and their effects are discussed.  The p...

متن کامل

Parallel Particle Simulations of Thin-Film Deposition

Thin-film growth by sputter deposition is a manufacturing process that is well suited for study by particle simulation methods. The authors report on the development of a high performance, parallel, molecular-dynamics software package that simulates atomic metal systems under sputter deposition conditions. The package combines advanced techniques for parallel molecular dynamics with specialized...

متن کامل

Influence of co-reagent on the atomic layer deposition of copper thin films

The superlative electrical conductivities of copper (5.96×10S/m) and silver (6.30×10S/m) make them attractive candidates for interconnects in electronic devices, such as CMOS circuits, solar cells and plastic electronics. These factors have stimulated research to identify precursors for the ALD of copper thin films. The cyclopentadienyl copper tertiarybutyl isocyanide precursor, [CpCu(BuCN)] ha...

متن کامل

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal Of Advanced Research In Medical & Pharmaceutical Sciences

سال: 2017

ISSN: 2455-6998

DOI: 10.22413/ijarmps/2017/v2/i2/48981